Sökning: "mikael hellström"

Visar resultat 1 - 5 av 10 avhandlingar innehållade orden mikael hellström.

  1. 1. Silicon Carbide High Temperature Photodetectors and Image Sensor

    Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER

  3. 2. Resultatenheter i kommunalteknisk verksamhet : struktur, process och effekt

    Författare :Mikael Hellström; Företagsekonomiska institutionen; []
    Nyckelord :SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; economic theory; econometrics; Economics; intention of change; municipal; organizational design; effects; profit center; economic systems; economic policy; Nationalekonomi; ekonometri; ekonomisk teori; ekonomiska system; ekonomisk politik;

    Sammanfattning : The focus of this thesis is on the most widespread organizational change that the public sector has gone through during the 1990s: the introduction, implementation and continuous use of profit centers. There are three major reasons for studying profit centers. LÄS MER

  4. 3. Exciton-plasmon interactions in metal-semiconductor nanostructures

    Författare :Staffan Hellström; Ying Fu; Mikael Käll; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; plasmons; excitons; quantum dots; nanoparticles; FDTD; surface plasmon polaritons; QDIP; quantum dot infrared photodetector; polaritons;

    Sammanfattning : Semiconductor quantum dots and metal nanoparticles feature very strong light-matter interactions, which has led to their use in many photonic applications such as photodetectors, biosensors, components for telecommunications etc.Under illumination both structures exhibit collective electron-photon resonances, described in the frameworks of quasiparticles as exciton-polaritons for semiconductors and surface plasmon-polaritons for metals. LÄS MER

  5. 4. CT Guided Ablation of T1 Renal Tumors

    Författare :Vanessa Acosta Ruiz; Anders Magnusson; Mikael Hellström; Uppsala universitet; []
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Renal tumor; Ablation; Radiofrequency ablation; Microwave ablation; Radiology; Radiologi;

    Sammanfattning : The widespread use of medical imaging contributes to the increased detection of incidentally detected small renal tumors, a majority which are often indolent masses found in elderly patients with preexisting chronic kidney disease. In Sweden, partial nephrectomy with minimal invasive surgical approach is the current standard for removing these tumors, although another option is percutaneous image-guided tumor ablation that allows treatment of elderly patients with comorbidities for who surgery is a risk. LÄS MER

  7. 5. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

    Författare :Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER