Sökning: "Per-Erik Hellström"
Visar resultat 1 - 5 av 7 avhandlingar innehållade orden Per-Erik Hellström.
Sammanfattning : This thesis presents work related to new types of photo detectors and their applications. The focus has been on the development of process technology and methods by means of experimentation and measurements. LÄS MER
Sammanfattning : Sequential 3D (S3D) integration has been identified as a potential candidate for area efficient ICs. It entails the sequential processing of tiers of devices, one on top the other. LÄS MER
Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER
Sammanfattning : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. LÄS MER
Sammanfattning : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). LÄS MER