Sökning: "bipolar junction transistor BJT"
Visar resultat 1 - 5 av 15 avhandlingar innehållade orden bipolar junction transistor BJT.
1. On Reliability of SiC Power Devices in Power Electronics
Sammanfattning : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. LÄS MER
2. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors
Sammanfattning : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. LÄS MER
3. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER
4. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
Sammanfattning : .... LÄS MER
5. High power bipolar junction transistors in silicon carbide
Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER