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Visar resultat 1 - 5 av 10 avhandlingar som matchar ovanstående sökkriterier.
1. Silicon Carbide High Temperature Photodetectors and Image Sensor
Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER
2. Resultatenheter i kommunalteknisk verksamhet : struktur, process och effekt
Sammanfattning : The focus of this thesis is on the most widespread organizational change that the public sector has gone through during the 1990s: the introduction, implementation and continuous use of profit centers. There are three major reasons for studying profit centers. LÄS MER
3. Exciton-plasmon interactions in metal-semiconductor nanostructures
Sammanfattning : Semiconductor quantum dots and metal nanoparticles feature very strong light-matter interactions, which has led to their use in many photonic applications such as photodetectors, biosensors, components for telecommunications etc.Under illumination both structures exhibit collective electron-photon resonances, described in the frameworks of quasiparticles as exciton-polaritons for semiconductors and surface plasmon-polaritons for metals. LÄS MER
4. CT Guided Ablation of T1 Renal Tumors
Sammanfattning : The widespread use of medical imaging contributes to the increased detection of incidentally detected small renal tumors, a majority which are often indolent masses found in elderly patients with preexisting chronic kidney disease. In Sweden, partial nephrectomy with minimal invasive surgical approach is the current standard for removing these tumors, although another option is percutaneous image-guided tumor ablation that allows treatment of elderly patients with comorbidities for who surgery is a risk. LÄS MER
5. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology
Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER