Visar resultat 1 - 5 av 52 avhandlingar innehållade ordet ALD.
Sammanfattning : Bismuth titanate Bi4Ti3O12, is one of the bismuth based layered ferroelectric materials that is a candidate for replacing the lead based ferroelectric materials in for instance non-volatile ferroelectric random access memories (FRAM). This is due to the fact that the bismuth based ferroelectrics consists of pseudo perovskite units sandwiched in between bismuth oxide layers, which gives them a better fatigue nature. LÄS MER
Sammanfattning : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. LÄS MER
Sammanfattning : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. LÄS MER
Sammanfattning : Cu(In,Ga)Se2 (CIGS) thin film solar cells contain a thin layer of CdS. To avoid toxic heavy-metal-containing waste in the module production the development of a cadmium-free buffer layer is desirable. This thesis considers alternative Cd-free buffer materials deposited by Atomic Layer Deposition (ALD). LÄS MER
Sammanfattning : This thesis aims to contribute to the development of improved window layer structures for chalcopyrite thin-film solar cells, with an emphasis on the buffer layer, to assist future reductions of the levelized cost of energy. This is realized by exploring the potential of existing materials and deposition processes, as well as developing new buffer layer processes based on atomic layer deposition (ALD). LÄS MER