Sökning: "Lars-Åke Ragnarsson"
Hittade 3 avhandlingar innehållade orden Lars-Åke Ragnarsson.
1. Deposition of high quality thin dielectrics on silicon
Sammanfattning : .... LÄS MER
2. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization
Sammanfattning : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. LÄS MER
3. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology
Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER