Sökning: "Carl-Mikael Zetterling"

Visar resultat 1 - 5 av 20 avhandlingar innehållade orden Carl-Mikael Zetterling.

  1. 1. Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs

    Författare :Carl-Mikael Zetterling; KTH; []
    Nyckelord :;

    Sammanfattning : Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelectronic devices. LÄS MER

  2. 2. SiC CMOS and memory devices for high-temperature integrated circuits

    Författare :Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER

  3. 3. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

  4. 4. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

    Författare :Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Sammanfattning : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. LÄS MER

  5. 5. High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology

    Författare :Raheleh Hedayati; Carl-Mikael Zetterling; H. Alan Mantooth; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; silicon carbide SiC ; bipolar junction transistor BJT ; high temperature; SiC integrated circuit; Spice Gummel-Poon SGP ; operational amplifier opamp ; negative feedback amplifier; bandgap reference; masterslave comparator; digital-to-analog converter DAC ; analog-to-digital converter ADC ; flash ADC; successive approximation register SAR ADC; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. LÄS MER