Sökning: "Mikael Östling"

Visar resultat 1 - 5 av 19 avhandlingar innehållade orden Mikael Östling.

  1. 1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

  2. 2. Silicon Carbide High Temperature Photodetectors and Image Sensor

    Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER

  3. 3. Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes

    Författare :Arash Salemi; Mikael Östling; Carl-Mikael Zetterling; Anders Hallen; Nando Kaminski; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. LÄS MER

  4. 4. Development of metallization systems for VLSI technology : the use of RBS and other analytical tools

    Författare :Mikael Östling; Uppsala universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : .... LÄS MER

  5. 5. Horizontal Slot Waveguides for Silicon Photonics Back-End Integration

    Författare :Maziar A. M. Naiini; Mikael Östling; Jörge Schulze; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon photonics; slot waveguides; grating couplers; CMOS tech- nology; high-k; ALD; germanium photodetectors; graphene photodetectors; pho- tonic integrated circuits;

    Sammanfattning : This thesis presents the development of integrated silicon photonic devices. These devices are compatible with the present and near future CMOS technology. High-khorizontal grating couplers and waveguides are proposed. LÄS MER