Sökning: "SiGe selective epitaxy"
Visar resultat 6 - 9 av 9 avhandlingar innehållade orden SiGe selective epitaxy.
6. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition
Sammanfattning : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. LÄS MER
7. Silicon nanowire based devices for More than Moore Applications
Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER
8. Device design and process integration for SiGeC and Si/SOI bipolar transistors
Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER
9. Optical characterization of Silicon-based self-assembled nanostructures
Sammanfattning : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. LÄS MER