Sökning: "hafnium oxide"

Visar resultat 1 - 5 av 9 avhandlingar innehållade orden hafnium oxide.

  1. 1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Katarina Forsgren; Uppsala universitet.; [2001]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; NATURAL SCIENCES Chemistry; NATURVETENSKAP Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. LÄS MER

  2. 2. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Jonas Sundqvist; Uppsala universitet.; [2003]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; NATURAL SCIENCES Chemistry Inorganic chemistry; NATURVETENSKAP Kemi Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Sammanfattning : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. LÄS MER

  3. 3. Silicon nanowire based devices for More than Moore Applications

    Detta är en avhandling från Stockholm, Sweden : KTH Royal Institute of Technology

    Författare :Ganesh Jayakumar; KTH.; [2018]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

  4. 4. Investigation of hafnium for biomedical applications corrosion and tribocorrosion in simulated body fluids

    Detta är en avhandling från Luleå : Luleå tekniska universitet

    Författare :Jorge Rituerto Sin; Luleå tekniska universitet.; [2013]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Maskinelement; Machine Elements;

    Sammanfattning : Metals have excellent properties, such as high strength, ductility and toughness, which make them the material of choice for many biomedical applications. However, the main drawback of metals is their general tendency to corrode, which is an important factor when they are used as biomaterials due to the corrosive nature of the human body. LÄS MER

  5. 5. Exploratory Study of Novel Materials Used for Intermediate Temperature Solid Oxide Fuel Cell (IT-SOFC) Electrolytes

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Junfu Bu; KTH.; [2014]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Hafnium oxide; Solid oxide fuel cells SOFCs ; Electrolyte; Electrochemical impedance spectroscopy; Solid state reaction method; Solid state reactive sintering SSRS ; Ionic conductivity; oxygen ion conductivity; Protonic conductivity; Composite electrolyte.;

    Sammanfattning : Currently, yttria-stabilized zirconia (YSZ) is still the dominant electrolyte material in commercial SOFC applications. But it has severe drawbacks due to its high operating temperatures. In present work, two electrolyte materials: Hf0.69Y0. LÄS MER