Sökning: "device simulation"

Visar resultat 1 - 5 av 200 avhandlingar innehållade orden device simulation.

1. 1. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER

3. 2. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

   Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

4. 3. Simulation and Optimization of SiC Field Effect Transistors

   Författare :Kent Bertilsson; Hans-Erik Nilsson; Christian Brylinski; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiC; Device simulation; RF; power; MESFET; Elektronik; Electronics; Elektronik;

   Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER

5. 4. Oscillator design in III-V technologies

   Författare :Szhau Lai; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; InGaP HBT; device model; mixer; Darlington pair; GaN HEMT; simulation; varactor; phase noise; CAD; switch mode.; VCO; Colpitts oscillator; low frequency noise;

   Sammanfattning : The thesis treats the design of low phase noise oscillators/VCOs in GaAs/InGaP HBT and GaN HEMT technologies. The covered topics are: active device modeling, noise characterization, passive structures, phase noise models, simulation/measurement tools, circuit topologies, and design techniques. LÄS MER

7. 5. Energy Efficient Window Systems. Effects on Energy Use and Daylight in Buildings

   Författare :Helena Bülow-Hübe; Avdelningen för Energi och byggnadsdesign; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; simulation; thermal transmittance; solar energy transmittance; shading device; solar protection; cooling; heating; energy demand; building; low-emittance coating; window; glazing; comfort; user aspects; operative temperature; Architecture; Building construction; Byggnadsteknik; daylight; perception; interior design; Arkitektur; inredningsarkitektur; Energy research; Energiforskning;

   Sammanfattning : This thesis deals with energy-efficient windows in Swedish buildings. Parametric studies were performed in the dynamic energy simulation tool Derob-LTH in order to study the effects of window choices on energy use and indoor climate for both residential and office buildings. LÄS MER