Sökning: "back gate"

Visar resultat 1 - 5 av 15 avhandlingar innehållade orden back gate.

  1. 1. Silicon nanowire based devices for More than Moore Applications

    Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

  3. 2. Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices

    Författare :Johannes Svensson; Göteborgs universitet; Göteborgs universitet; Gothenburg University; []
    Nyckelord :Carbon nanotube; chemical vapour deposition; Field effect transistor; Marangoni convection; Schottky barrier;

    Sammanfattning : Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics due to their excellent electronic properties such as high mobility, compatibility with high-k dielectrics and small diameters resulting in advantageous electrostatics. This thesis is divided into three separate topics related to increasing the fabrication yield and performance of CNT field effect transistors (CNTFETs). LÄS MER

  4. 3. Electron transport properties of graphene and graphene field-effect devices studied experimentally

    Författare :Youngwoo Nam; Chalmers University of Technology; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; dual-gated graphene field effect devices; thermopower; quantum Hall effect; graphene; Aharonov-Bohm effect; chemical vapour deposition;

    Sammanfattning : This thesis contains experimental studies on electronic transport properties of graphene with the Aharonov-Bohm (AB) effect, thermopower (TEP) measurements, dual-gated graphene field effect devices, and quantum Hall effect (QHE). Firstly, in an effort to enhance the AB effect in graphene, we place superconducting-metal (aluminium) or normal-metal (gold) mirrors on the graphene rings. LÄS MER

  5. 4. Quantum theory of time-dependent transport in graphene

    Författare :Yevgeniy Korniyenko; Chalmers University of Technology; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; graphene; ballistic quantum transport; Landauer-Büttiker theory; Fano resonance; Floquet scattering matrix;

    Sammanfattning : High-quality ballistic electronic devices made from graphene are becoming an experimental reality. Carbon-based electronics is heralded if not to succeed or surpass then to complement the existing semiconducting technology. LÄS MER

  7. 5. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Författare :Eunjung Cha; Chalmers University of Technology; []
    Nyckelord :cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. LÄS MER