Sökning: "back gate"
Visar resultat 1 - 5 av 15 avhandlingar innehållade orden back gate.
Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER
Sammanfattning : Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics due to their excellent electronic properties such as high mobility, compatibility with high-k dielectrics and small diameters resulting in advantageous electrostatics. This thesis is divided into three separate topics related to increasing the fabrication yield and performance of CNT field effect transistors (CNTFETs). LÄS MER
3. Electron transport properties of graphene and graphene field-effect devices studied experimentally
Sammanfattning : This thesis contains experimental studies on electronic transport properties of graphene with the Aharonov-Bohm (AB) effect, thermopower (TEP) measurements, dual-gated graphene field effect devices, and quantum Hall effect (QHE). Firstly, in an effort to enhance the AB effect in graphene, we place superconducting-metal (aluminium) or normal-metal (gold) mirrors on the graphene rings. LÄS MER
Sammanfattning : High-quality ballistic electronic devices made from graphene are becoming an experimental reality. Carbon-based electronics is heralded if not to succeed or surpass then to complement the existing semiconducting technology. LÄS MER
Sammanfattning : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub GHz up to 120 GHz. LÄS MER