Sökning: "Nickel source drain"
Hittade 4 avhandlingar innehållade orden Nickel source drain.
Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER
Sammanfattning : The function of titanium- and nickel-silicides is to lower the series resistance and contact resistivity in gate, source and drain contacts of an integrated circuit transistor. With decreasing dimensions, the low resistivity C54 TiSi2 is not formed and stays in its high resistivity phase C49. LÄS MER
Sammanfattning : Three-dimensional integrated circuits have great potential for further increasing the number of transistors per area by stacking several device tiers on top of each other and without the need to continue the evermore complicated and expensive down-scaling of transistor dimensions. Among the different approaches towards the realization of such circuits, the monolithic approach, i. LÄS MER
Sammanfattning : This thesis deals with single-electron tunneling in transistor-like devices in which the central electrode is either a metal nanoparticle (possibly ferromagnetic) or a molecular magnet. The investigated systems split into two different categories, depending on the size of the central island. LÄS MER