Sökning: "Nickel source drain"

Hittade 4 avhandlingar innehållade orden Nickel source drain.

  1. 1. Silicon nanowire based devices for More than Moore Applications

    Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

  2. 2. High-Resolution Studies of Silicide-films for Nano IC-Components

    Författare :Tobias Jarmar; Fredric Ericson; Ulf Smith; Terje Finstad; Uppsala universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Materials science; thin films; titaniumsilicide; nickel-germanosilicide; ternary phase diagram; textured germanosilicide; high resolution materials analysis; Materialvetenskap; Materials science; Teknisk materialvetenskap;

    Sammanfattning : The function of titanium- and nickel-silicides is to lower the series resistance and contact resistivity in gate, source and drain contacts of an integrated circuit transistor. With decreasing dimensions, the low resistivity C54 TiSi2 is not formed and stays in its high resistivity phase C49. LÄS MER

  3. 3. Contacts and Interconnects for Germanium-based Monolithic 3D Integrated Circuits

    Författare :Lukas Jablonka; Zhen Zhang; Shi-Li Zhang; Fabrice Nemouchi; Uppsala universitet; []
    Nyckelord :Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : Three-dimensional integrated circuits have great potential for further increasing the number of transistors per area by stacking several device tiers on top of each other and without the need to continue the evermore complicated and expensive down-scaling of transistor dimensions. Among the different approaches towards the realization of such circuits, the monolithic approach, i. LÄS MER

  4. 4. Single-Electron Tunneling Spectroscopy in Magnetic Nanoparticles and Molecular Magnets

    Författare :Lukasz Michalak; Fasta tillståndets fysik; []
    Nyckelord :master equation; magnetic nanoparticles; spin accumulation; molecular magnets; TMR; tunneling magnetoresistance; F-SET; ferromagnetic single-electron transistor; single-electron tunneling; nanomagnetism; spintronics; Coulomb blockade;

    Sammanfattning : This thesis deals with single-electron tunneling in transistor-like devices in which the central electrode is either a metal nanoparticle (possibly ferromagnetic) or a molecular magnet. The investigated systems split into two different categories, depending on the size of the central island. LÄS MER