Sökning: "ISFET"

Hittade 3 avhandlingar innehållade ordet ISFET.

  1. 1. On the Low Frequency Noise in Ion Sensing

    Författare :Da Zhang; Zhen Zhang; Shili Zhang; Hans Norström; Jörgen Olsson; Michel Calame; Uppsala universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; low frequency noise; ion sensor; ISFET; electrochemical impedance spectroscopy; constant phase element; surface chemistry; CMOS technology; Engineering Science; Teknisk fysik;

    Sammanfattning : Ion sensing represents a grand research challenge. It finds a vast variety of applications in, e.g., gas sensing for domestic gases and ion detection in electrolytes for chemical-biological-medical monitoring. LÄS MER

  2. 2. Electronic Sensors Based on Nanostructured Field-Effect Devices

    Författare :Si Chen; Shili Zhang; Jan Linnros; Christian Schönenberger; Uppsala universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; biosensor; field-effect transistor; nanowire; ISFET; Elektronik; Electronics;

    Sammanfattning : Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. LÄS MER

  3. 3. Silicon nanowire based devices for More than Moore Applications

    Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER