Sökning: "Silicon-Germanium SiGe"
Visar resultat 1 - 5 av 11 avhandlingar innehållade orden Silicon-Germanium SiGe.
1. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects
Sammanfattning : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. LÄS MER
2. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors
Sammanfattning : .... LÄS MER
3. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors
Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER
4. Device design and process integration for SiGeC and Si/SOI bipolar transistors
Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER
5. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
Sammanfattning : .... LÄS MER