Sökning: "SiGeC layer staiblity"

Hittade 1 avhandling innehållade orden SiGeC layer staiblity.

1. 1. Device design and process integration for SiGeC and Si/SOI bipolar transistors

   Författare :Erik Haralson; KTH; []
   Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

   Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER