Sökning: "fully depleted silicon on insulator technology"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden fully depleted silicon on insulator technology.

  1. 1. Silicon nanowire based devices for More than Moore Applications

    Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

  2. 2. Implementation of Flash Analog-to-Digital Converters in Silicon-on-Insulator Technology

    Författare :Erik Säll; Mark Vesterbacka; Bengt E. Jonsson; Linköpings universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; flash analog-to-digital converter; ADC; silicon-on-insulator; SOI; top-down design; dynamic element matching; DEM; thermometer-to-binary encoder; flash ADC modeling; Electronics; Elektronik;

    Sammanfattning : High speed analog-to-digital converters (ADCs) used in, e.g., read channel and ultra wideband (UWB) applications are often based on a flash topology. The read channel applications is the intended application of this work, where a part of the work covers the design of two different types of 6-bit flash ADCs. LÄS MER

  3. 3. Implementation of Flash Analog-to-Digital Converters in Silicon-on-Insulator CMOS Technology

    Författare :Erik Säll; Mark Vesterbacka; Bengt E. Jonsson; Linköpings universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; analog-to-digital converters; ADC; silicon-on-insulator; SOI; Electronics; Elektronik;

    Sammanfattning : A 130 nm partially depleted silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is evaluated with respect to analog circuit implementation. We perform the evaluation through implementation of three flash analog-to-digital converters (ADCs). LÄS MER

  4. 4. Silicon device substrate and channel characteristics influenced by interface properties

    Författare :Mikael Johansson; Chalmers University of Technology; []
    Nyckelord :channel; attenuation; zro2; interface; traps; semi-insulating; high-k; mos; cross-talk; hfo2;

    Sammanfattning : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. LÄS MER

  5. 5. High-Speed Analog-to-Digital Converters in CMOS

    Författare :Siyu Tan; Integrerade elektroniksystem; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; A D converters; CMOS circuit design; ΔΣ ADC; high-speed ADC; Nyquist-rate ADC; oversampled ADC; SAR ADC; 5G;

    Sammanfattning : The Analog to Digital (A/D) Converters (ADC) are vital components in high-performance radio devices. In the receiver end, the signal received by the analog front-end can not be directly analyzed by the digital core, thus requiring high-performance ADC circuits acting as bridges connecting the analog and digital domain. LÄS MER