Sökning: "Julius Hållstedt"

Hittade 2 avhandlingar innehållade orden Julius Hållstedt.

  1. 1. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    Författare :Julius Hållstedt; KTH; []
    Nyckelord :Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Sammanfattning : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. LÄS MER

  3. 2. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

    Författare :Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER