Sökning: "Epitaxial transfer"

Visar resultat 1 - 5 av 25 avhandlingar innehållade orden Epitaxial transfer.

1. 1. Silicon nanowire based devices for More than Moore Applications

   Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

3. 2. Engineering Epitaxial Graphene for Quantum Metrology

   Författare :Hans He; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Epitaxial Graphene; Magnetotransport; Quantum Resistance Metrology; Chemical Doping;

   Sammanfattning : Quantum resistance metrology deals both with the precise and accurate measurement of electrical resistance, by utilizing the quantum hall effect (QHE) in two-dimensional electron gases (2DEGs) such as those based on gallium arsenide (GaAs). Due to the unique properties of graphene, and specifically epitaxial graphene grown on silicon carbide (SiC/G), quantum Hall resistance (QHR) standards based on graphene perform better in a wider parameter space (temperature, current and magnetic field) than conventional semiconducting materials. LÄS MER

4. 3. Fabrication of Integrated HBV Multipliers for THz Generation

   Författare :Aleksandra Malko; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon.; indium phosphide; frequency multipliers; power sensors; Epitaxial transfer; heterostructure barrier varactors;

   Sammanfattning : The main objective of this licentiate thesis is to demonstrate silicon integrated HBV frequency multipliers for THz generation with RF performance comparable with InP technology. The choice of silicon is motivatedby better thermal and mechanical properties, cost and ease of integration compared to III-V semiconductor substrates. LÄS MER

5. 4. Silicon Integrated HBV Frequency Multipliers for THz Applications

   Författare :Aleksandra Malko; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; frequency multipliers; Heterostrucutre Barrier Varactors HBVs ; THz sources; wafer bonding.; integrated circuits; heterogeneous integration; Compund semiconductors; epitaxial transfer; MICs;

   Sammanfattning : This thesis deals with integrated varactor diode circuits for terahertz (THz) applications. In particular hybrid, monolithic microwave integrated circuits (MMICs), and heterogeneous integration are explored for frequency multiplier applications. LÄS MER

7. 5. Stochastic Resonance and Noise-Assisted Signal Transfer : On Coupling Effects of Stochastic Resonators and Spectral Optimization of Fluctuations in Random Network Switches

   Författare :Peter Hammerstein; Claes Granqvist; Laszlo Kish; Hans Liljenström; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Engineering physics; stochastic resonance; nonlinear stochastic dynamics; noise and fluctuations; magnetic domains; Teknisk fysik; Engineering physics; Teknisk fysik;

   Sammanfattning : Recent research shows that noise or random fluctuations must not always be destructive in Nature by degrading system performance. On the contrary, in nonlinear systems they can synchronize systems or enhance the quality of signal transmission. The latter possibility is reported in the thesis. LÄS MER