Sökning: "germanium transistors"

Visar resultat 11 - 15 av 17 avhandlingar innehållade orden germanium transistors.

  1. 11. Device design and process integration for SiGeC and Si/SOI bipolar transistors

    Författare :Erik Haralson; KTH; []
    Nyckelord :Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

    Sammanfattning : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. LÄS MER

  3. 12. Contacts and Interconnects for Germanium-based Monolithic 3D Integrated Circuits

    Författare :Lukas Jablonka; Zhen Zhang; Shi-Li Zhang; Fabrice Nemouchi; Uppsala universitet; []
    Nyckelord :Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Sammanfattning : Three-dimensional integrated circuits have great potential for further increasing the number of transistors per area by stacking several device tiers on top of each other and without the need to continue the evermore complicated and expensive down-scaling of transistor dimensions. Among the different approaches towards the realization of such circuits, the monolithic approach, i. LÄS MER

  4. 13. Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration

    Författare :Ali Asadollahi; Mikael Östling; Paul R. Berger; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; monolithic three dimensional M3D integration; strained germanium on insulator sGeOI pMOSFETs; silicon silicon-germanium on insulator sSOI sSiGeOI nMOSFETs; Si0.5Ge0.5 strain-relaxed buffer SRB ; direct bonding; chemical mechanical polishing CMP ; compressively strained GeOI; tensile strained Si0.5Ge0.5OI;

    Sammanfattning : The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. LÄS MER

  5. 14. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

    Författare :Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. LÄS MER

  7. 15. Tunneling Based Electronic Devices

    Författare :Erik Lind; Institutionen för elektro- och informationsteknik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

    Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER