Sökning: "germanium transistors"

Visar resultat 6 - 10 av 17 avhandlingar innehållade orden germanium transistors.

  1. 6. Sequential 3D Integration - Design Methodologies and Circuit Techniques

    Författare :Panagiotis Chaourani; Ana Rusu; Saul Rodriguez; Per-Erik Hellström; Georges Gielen; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; sequential 3D integration; monolithic inter-tier vias; design platforms; parasitic extraction flows; RF AMS circuits; inductors; heterogeneous integration; germanium transistors; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Sequential 3D (S3D) integration has been identified as a potential candidate for area efficient ICs. It entails the sequential processing of tiers of devices, one on top the other. LÄS MER

  3. 7. Modelling of Silicon Germanium heterojunction bipolar transistors and its applications

    Författare :S Bruce; Uppsala universitet; []
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  4. 8. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

    Författare :B. Gunnar Malm; KTH; []
    Nyckelord :Silicon-Germanium SiGe ; heterojunction bipolar transistor HBT ; low-frequency noise; high-frequency noise; harmonic distortion; linearity; device simulation; collector profile; epitaxial base integration; radio frequency RF ; radio frequency inte;

    Sammanfattning : .... LÄS MER

  5. 9. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

    Författare :Martin Sandén; KTH; []
    Nyckelord :bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

    Sammanfattning : .... LÄS MER

  7. 10. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

    Författare :Johan Pejnefors; KTH; []
    Nyckelord :chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

    Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER