Sökning: "SiGe"
Visar resultat 1 - 5 av 57 avhandlingar innehållade ordet SiGe.
1. Near-infrared photodetectors based on Si/SiGe nanostructures
Sammanfattning : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. LÄS MER
2. Ultrathin gate oxides for future SiGe CMOS devices
Sammanfattning : .... LÄS MER
3. Source and drain engineering in SiGe-based pMOS transistors
Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER
4. Interaction of Ni with SiGe for electrical contacts in CMOS technology
Sammanfattning : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. LÄS MER
5. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures
Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER