Sökning: "Semiconductor physics"
Visar resultat 1 - 5 av 310 avhandlingar innehållade orden Semiconductor physics.
1. Electronic Structure Calculations of Point Defects in Semiconductors
Sammanfattning : In this thesis point defects in semiconductors are studied by electronic structure calculations. Results are presented for the stability and equilibrium concentrations of native defects in GaP, InP, InAs, and InSb, for the entire range of doping conditions and stoichiometry. LÄS MER
2. Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells
Sammanfattning : Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically. It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes. LÄS MER
3. Scanning tunneling microscopy and photoemission studies of Ag films on metal/semiconductor surfaces
Sammanfattning : The research presented in this thesis has been focused on the study of thin Ag films, grown on metal-reconstructed Si(111) and Ge(111) surfaces.The films have been grown at room temperature, and the morphologiesand electronic structures of the films have been investigated using scanning tunneling microscopy and spectroscopy (STM/STS), low-energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy(ARPES). LÄS MER
4. Radiation tests of semiconductor detectors
Sammanfattning : This thesis investigates the response of Gallium Arsenide (GaAs) detectors to ionizing irradiation. Detectors based on π-υ junction formed by deep level centers doping. LÄS MER
5. Optical spectroscopy of InGaAs quantum dots
Sammanfattning : The work presented in this thesis deals with optical studies of semiconductor quantum dots (QDs) in the InGaAs material system. It is shown that for self-assembled InAs QDs, the interaction with the surrounding GaAs barrier and the InAs wetting layer (WL) in particular, has a very large impact on their optical properties. LÄS MER