Sökning: "silicon silicon-germanium on insulator sSOI sSiGeOI nMOSFETs"
Hittade 1 avhandling innehållade orden silicon silicon-germanium on insulator sSOI sSiGeOI nMOSFETs.
1. Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration
Sammanfattning : The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. LÄS MER
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