Sökning: "GaAs"

Visar resultat 1 - 5 av 234 avhandlingar innehållade ordet GaAs.

  1. 1. Silicon δ-doping and GaAs/Si/GaAs heterostructures

    Författare :Jan Thordson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaAs Si GaAs; GaAs; delta-doping; heterostructures; MBE; silicon;

    Sammanfattning : .... LÄS MER

  3. 2. Microstructure of the Schottky contact : Ag/GaAs and Au/GaAs

    Författare :Qiu-Hong Hu; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Au; atom-probe fiels-ion microscopy; Schottky contact; interface; Ag; microstructure; transmission electron microscopy; GaAs; oxygen;

    Sammanfattning : .... LÄS MER

  4. 3. Metamorphic Heterostructures and Lasers on GaAs

    Författare :Ivar Tångring; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

    Sammanfattning : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. LÄS MER

  5. 4. Atom-probe microanalysis of the AuGe/GaAs interface

    Författare :Anders Kvist; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; interface; GaAs; atom-probe field-ion microscopy; microstructure; ohmic contact; AuGe; diffusion;

    Sammanfattning : .... LÄS MER

  7. 5. Optimization of Metamorphic Materials on GaAs Grown by MBE

    Författare :Yuxin Song; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; heterostructures; alloy graded buffer; GaAs; molecular beam epitaxy; metamorphic; threading dislocation; InGaAs;

    Sammanfattning : Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) have enabled the idea of semiconductor heterostructures, which built up the foundation of the fast developing information and communication technology nowadays. Lattice mismatch has been a problem limiting designs of semiconductor heterostructures. LÄS MER