Sökning: "Esaki Diodes"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden Esaki Diodes.

1. 1. Tunneling Based Electronic Devices

   Författare :Erik Lind; Institutionen för elektro- och informationsteknik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiGe; Esaki Diodes; classical mechanics; quantum mechanics; relativity; termodynamik; relativitet; kvantmekanik; statistisk fysik; Matematisk och allmän teoretisk fysik; thermodynamics; gravitation; statistical physics; GaAs; Mathematical and general theoretical physics; Resonant Tunneling Permeable Base Transistors; Resonant Tunneling Diodes; klassisk mekanik; Fysicumarkivet A:2004:Lind;

   Sammanfattning : This thesis concerns different kinds of tunneling based devices all showing negative differential resistance. The thesis is divided in three parts, resonant tunneling transistors, Esaki diodes and coupled zero dimensional systems. LÄS MER

3. 2. UHV-CVD growth of Ge/Si nanostructures

   Författare :Vilma Zela; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

   Sammanfattning : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. LÄS MER

4. 3. Doping of Semiconductor Nanowires

   Författare :Jesper Wallentin; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; metal-organic vapour phase epitaxy; III-V semiconductor materials; nanowires; doping; solar cells; F:2013:Wallentin;

   Sammanfattning : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. LÄS MER

5. 4. Quantum Transport in Heterostructure Nanowire Devices

   Författare :Bahram Ganjipour; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet A:2014:Ganjipour;

   Sammanfattning : This thesis investigates electronic transport in several types of novel heterostructure nanowires. The first part of the thesis focuses on band-to-band mechanisms in heterostructure nanowires for low-power electronics. First, tunnel field-effect transistors (TFETs) based on InP/GaAs heterostructure nanowires with n-i-p doping profile are explored. LÄS MER

7. 5. Development of new characterization techniques for III-V nanowire devices

   Författare :Olof Persson; Synkrotronljusfysik; []
   Nyckelord :STM; XPS; Semiconductor nanowires; nanowire devices; top contact mode; HAXPES; Fysicumarkivet A:2017:Persson;

   Sammanfattning : This dissertation presents the new methods and techniques developed to investigate the properties of nanowires (NWs) and NW devices and the results obtained using these methods. The growth and characterization of NWs have become a large research field because NWs have been shown to improve the properties of many semiconductor applications such as transistors, solar cells, and light emitting diodes. LÄS MER