Sökning: "scanning capacitance microscopy"

Visar resultat 1 - 5 av 18 avhandlingar innehållade orden scanning capacitance microscopy.

  1. 1. Scanning capacitance microscopy for semiconductor characterisation

    Författare :Olle Bowallius; KTH; []
    Nyckelord :SCM; SSRM; InP; Si; Buried heterostructure laser; Doping; Regrowth; Capacitance; P-n junction;

    Sammanfattning : .... LÄS MER

  3. 2. Growth and characterization of SiC and GaN

    Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  4. 3. Fractal superconducting resonators for the interrogation of two-level systems

    Författare :Sebastian Erik de Graaf; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Cooper-pair box; decoherence; electron spin resonance; two-level systems; atomic force microscopy; quasiparticles; near-field scanning microwave microscopy; Superconducting resonators; circuit quantum electrodynamics;

    Sammanfattning : In this thesis we use high-Q superconducting thin-film microwave resonators to interact with several types of quantum mechanical two-level systems. Such a resonator is used as the central building block in a cryogenic near-field scanning microwave microscope (NSMM) to reach a completely new regime of NSMM operation. LÄS MER

  5. 4. Scanning probe techniques as an investigation tool for semiconductor nanostructures and devices

    Författare :Jovana Colvin; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; AFM; STM; KPM; SCM; c-AFM; Crystal growth; Doping; Defects;

    Sammanfattning : Semiconductor nanostructure based devices provide new opportunities for contributing to a sustainable energy usage. This includes harvesting of energy (solar cells) and saving of energy, e.g. in lighting (light-emitting diodes, LEDs) and transfer of energy (power devices). LÄS MER

  7. 5. Thermally stable electrical contacts to 6H silicon carbide

    Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER