Sökning: "InP"
Visar resultat 1 - 5 av 181 avhandlingar innehållade ordet InP.
1. Spectroscopic studies of III-V semiconductors in two, one and zero dimensions
Sammanfattning : In this thesis, spectroscopic studies of quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) in III-V semiconductors are presented. The electronic structure of these low-dimensional structures have been studied by absorption, photocurrent, electroreflectance, photoluminescence (PL), and photoluminescence excitation (PLE) spectroscopy. LÄS MER
2. Photoluminescence Studies of Polytype Heterostructured InP Nanostructures
Sammanfattning : The interface between two semiconductors significantly influences their optical and electronic properties. In contrast to traditional material heterostructures, polytype heterostructures between wurtzite (wz) and zincblende (zb) segments in homomaterial InP nanostructures exhibit sharp interfaces with minimal strain. LÄS MER
3. Ion beam etching of InP based materials
Sammanfattning : Dry etching is an important technique for pattern transferin fabrication of most opto-electronic devices, since it canprovide good control of both structure size and shape even on asub-micron scale. Unfortunately, this process step may causedamage to the material which is detrimental to deviceperformance. LÄS MER
4. InP based Micromechanics for Vertical-Cavity Micro-Opto-Electro-Mechanical Systems
Sammanfattning : During the past decade, the amount of transmitted data hasbeen boosted due to an increasing use of the World Wide Web(WWW), video and audio transmissions. In the late 90s, thetraditional technology using twisted copper cables was nolonger capable to provide enough transmission capacity for theconstantly increasing data traffic. LÄS MER
5. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies
Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER