Sökning: "III-V semiconductors"
Visar resultat 1 - 5 av 46 avhandlingar innehållade orden III-V semiconductors.
1. Cathodoluminescence Studies of Quantum Structures and III-V nitrides
Sammanfattning : Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is based on experiments, using cathodoluminescence (CL) as a tool for characterization. The high spatial resolution and the possibility of spectroscopy of small structures make CL one of the most powerful techniques for these types of investigations. LÄS MER
2. Electrical Characterization of III-V Nanostructure
Detta är en avhandling från Department of Electrical and Information Technology, Lund UniversitySammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER
3. RHEED and RD studies of III-V semiconductors
Detta är en avhandling från Solid State PhysicsSammanfattning : The published papers and introductory part of this thesis concentrate on the in-situ characterization of (001) surfaces of GaAs, InAs, InP and GaP. The experimental tools used in these studies were a chemical beam epitaxy (CBE) machine equipped with a reflection high energy electron (RHEED) system and a reflectance difference (RD) optical set-up. LÄS MER
4. Fabrication of Low-Dimensional Structures in III-V Semiconductors
Detta är en avhandling från Solid State Physics, Lund UniversitySammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER
5. III-V MOSFETs for High-Frequency and Digital Applications
Detta är en avhandling från Department of Electrical and Information Technology, Lund UniversitySammanfattning : III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. LÄS MER
