Sökning: "III-V semiconductors"

Visar resultat 1 - 5 av 50 avhandlingar innehållade orden III-V semiconductors.

1. 1. Cathodoluminescence Studies of Quantum Structures and III-V nitrides

   Författare :Anders Petersson; [1998]
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; AlGaN; Fysik; Physics; GaN-AlGaN; single dot spectroscopy; InP-GaInP; Stranski Krastanow; quantum dots; quantum wires; low-dimensional structures; InAs-GaAs; III-V nitride; Cathodoluminescence; III-V semiconductors; Fysicumarkivet A:1999:Petersson;

   Sammanfattning : Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is based on experiments, using cathodoluminescence (CL) as a tool for characterization. The high spatial resolution and the possibility of spectroscopy of small structures make CL one of the most powerful techniques for these types of investigations. LÄS MER

3. 2. Electrical Characterization of III-V Nanostructure

   Detta är en avhandling från Department of Electrical and Information Technology, Lund University

   Författare :Aein Shiri Babadi; [2016-10-17]
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

   Sammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER

4. 3. RHEED and RD studies of III-V semiconductors

   Detta är en avhandling från Solid State Physics

   Författare :Bert Junno; [1996]
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; reflectance anisotropy; reflectance difference; RHEED; reflection high energy electron diffraction; III-V semiconductors; GaP; GaAs; InP; InAs; reflection high energy electron diffraction RHEED ; reflectance difference RD ; phase diagrams; surface reconstructions; Fysicumarkivet A:1996:Junno; Halvledarfysik; CBE GaAs; Semiconductory physics; chemical beam epitaxy; surface phase diagrams; RDS; RD; RAS;

   Sammanfattning : The published papers and introductory part of this thesis concentrate on the in-situ characterization of (001) surfaces of GaAs, InAs, InP and GaP. The experimental tools used in these studies were a chemical beam epitaxy (CBE) machine equipped with a reflection high energy electron (RHEED) system and a reflectance difference (RD) optical set-up. LÄS MER

5. 4. Fabrication of Low-Dimensional Structures in III-V Semiconductors

   Detta är en avhandling från Solid State Physics, Lund University

   Författare :Ivan Maximov; [1997]
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductors; plasma; etching; aerosol; lithography; quantum dots; quantum well wires; quantum point contact; damage; luminescence; Fysicumarkivet A:1997:Maximov; Halvledarfysik; Semiconductory physics;

   Sammanfattning : The thesis presents studies on the processing technology and the characterization of nanometer-sized and low-dimensional structures in III-V semiconductors. Two major approaches are described: 1) the combination of aerosol technology and plasma etching for the fabrication of quantum dots (QDs) in InP-based materials and 2) the use of high-resolution electron beam lithography and plasma or wet chemical etching to make quantum well wires (QWWs) in both GaAs and InP-based structures. LÄS MER

7. 5. III-V MOSFETs for High-Frequency and Digital Applications

   Detta är en avhandling från Department of Electrical and Information Technology, Lund University

   Författare :Cezar Zota; [2017-04-10]
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V; MOSFET; Transistor;

   Sammanfattning : III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet, a III-V transistor outperforming state-of-the-art silicon devices in VLSI-relevant metrics has not yet decisively been demonstrated. LÄS MER