Sökning: "sublimation growth"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden sublimation growth.

  1. 1. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material

    Författare :Valdas Jokubavičius; Mikael Syväjärvi; Rositsa Yakimova; Didier Chaussende; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. LÄS MER

  2. 2. Growth and characterization of SiC and GaN

    Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  3. 3. Sublimation Growth and Performance of Cubic Silicon Carbide

    Författare :Remigijus Vasiliauskas; Rositza Yakimova; Mikael Syväjärvi; Didier Chaussende; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at high temperature, and in harsh environments. Hexagonal polytypes of SiC, such as 6H-SiC and 4H-SiC are available on the power device markets. LÄS MER

  4. 4. Growth and Characterization of AlN : From Nano Structures to Bulk Material

    Författare :Gholamreza Yazdi; Rositza Yakimova; Mikael Syväjärvi; Zlatko Sitar; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP; Physics; Fysik;

    Sammanfattning : Aluminum nitride (AlN) exhibits a large direct band gap, 6.2 eV, and is thus suitable forsolid state white-light-emitting devices. It is capable in spintronics because of its high Curietemperature if doped with transition metals. LÄS MER

  5. 5. Device characteristics of sublimation grown 4H-SiC layers

    Författare :Rafal Ciechonski; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER