Sökning: "GaN"

Visar resultat 1 - 5 av 118 avhandlingar innehållade ordet GaN.

  1. 1. Corneal cellular proliferation and wound healing

    Detta är en avhandling från Stockholm : Karolinska Institutet, Department of Clinical Sciences

    Författare :Lisha Gan; Karolinska Institutet.; Karolinska Institutet.; [2000]
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; cornea; cell proliferation; wound healing; stem-cells; leukocytes; PCNA; hyaluronan; alkali injury; photorefractive keratectomy;

    Sammanfattning : Background. Cellular proliferation plays an important role in both physiological and pathological processes. Epithelial hyperplasia in the epithelium, excessive scar formation in retrocorneal membrane formation and neovascularization are examples of excessive proliferation of cornea cells. Lack of proliferative ability causes corneal degeneration. LÄS MER

  2. 2. GaN/AlN Multiple Quantum Well Structures

    Detta är en avhandling från Stockholm : Karolinska Institutet, Department of Clinical Sciences

    Författare :Xinju Liu; [2007]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Sammanfattning : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. LÄS MER

  3. 3. Regulation of vascular function by fluid mechanical forces. Development of a new vascular experimental platform for integrative physiological and molecular biological studies of living conduit vessels

    Detta är en avhandling från Göteborg

    Författare :Li-Ming Gan; Göteborgs universitet.; Gothenburg University.; [2000]
    Nyckelord :MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; perfusion model; endothelium; smooth muscle cells; shear stress; pressure; nitric oxide; endothelin-1; vascular endothelial growth factor; c-jun; c-fos; real-time PCR; NO probe.;

    Sammanfattning : The vascular endothelium is a multifunctional interface between blood flow and target organs and is continuously exposed to fluid mechanical forces such as shear stress, compressive, and tensile forces. Both in vivo and in vitro data indicate that biomechanical forces exert important modulating effects on key vascular functions. LÄS MER

  4. 4. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Detta är en avhandling från Göteborg

    Författare :Vincent Desmaris; [2006]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  5. 5. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Detta är en avhandling från Göteborg

    Författare :Stefan Davidsson; [2005]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER