Sökning: "MOCVD"

Visar resultat 1 - 5 av 23 avhandlingar innehållade ordet MOCVD.

  1. 1. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Författare :Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Sammanfattning : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). LÄS MER

  3. 2. Dynamics of a Droplet that Assists III-V Nanowire Growth

    Författare :Marcus Tornberg; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Crystal growth; III-V semiconductor nanowires; Environmental transmission electron mircoscopy; MOCVD; X-ray energy-dispersive spectroscopy; Fysicumarkivet A:2020:Tornberg;

    Sammanfattning : Control of the process of crystal growth has for decades been achieved by addressing the growth temperature and material supply of the growth species. Directional control of both crystal growth and etching has, for example, been achieved by utilizing a liquid droplet to assist the process. LÄS MER

  4. 3. High performance materials and processing technology for uncooled 1.3 μm laser diodes

    Författare :Roberta Campi; Gunnar Landgren; Abdallah Ougazzaden; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; MOCVD; InGaAsP; AlGaInAsP; AlGaInAs; In-situ etching; TBCI; Semiconductor physics; Halvledarfysik;

    Sammanfattning : This thesis investigates different material systems and processing technology for high temperature compatible laser diodes used in volume applications within the 1.3-μm telecom wavelength window. LÄS MER

  5. 4. Growth and characterization of SiC and GaN

    Författare :Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  7. 5. Epitaxy of GaAs-based long-wavelength vertical cavity lasers

    Författare :Carl Asplund; KTH; []
    Nyckelord :gainnas; ingaas; quantum wells; movpe; mocvd; vertical cavity laser; bcsel; long-wavelength; epitaxy; xrd; dbr;

    Sammanfattning : Vertical cavity lasers (VCLs) are of great interest aslow-cost, high-performance light sources for fiber-opticcommunication systems. They have a number of advantages overconventional edge-emitting lasers, including low powerconsumption, efficient fiber coupling and wafer scalemanufacturing/testing. LÄS MER