Sökning: "epilayer"

Visar resultat 1 - 5 av 8 avhandlingar innehållade ordet epilayer.

1. 1. Thermally stable electrical contacts to 6H silicon carbide

   Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER

3. 2. Epitaxial Growth and Characterization of SiC for High Power Devices

   Författare :Jawad ul Hassan; Peder Bergman; Hidekazu Tsuchida; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Silicon Carbide (SiC) is a semiconductor with a set of superior properties, including wide bandgap, high thermal conductivity, high critical electric field and high electron mobility. This makes it an excellent material for unipolar and bipolar electronic device applications that can operate under high temperature and high power conditions. LÄS MER

4. 3. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

   Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

5. 4. Porous Silicon -an enzyme coupling matrix for micromachined reactors

   Författare :Johan Drott; Avdelningen för Biomedicinsk teknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Instrumentation technology; glucose; biosensor; immobilised enzyme; porous silicon; microreactor; Mät- och instrumenteringsteknik;

   Sammanfattning : The development of a miniaturised silicon wafer integrated enzyme reactor is described. The reactor was micromachined by anisotropic wet etching of (110) silicon. The enzyme glucose oxidase (GOx) was coupled to the reactor surface with standard methods of immobilising enzyme to silica. LÄS MER

7. 5. Chloride-based Silicon Carbide CVD

   Författare :Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

   Sammanfattning : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. LÄS MER