Visar resultat 1 - 5 av 361 avhandlingar innehållade ordet SiC.
Sammanfattning : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. LÄS MER
Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER
Sammanfattning : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. LÄS MER
Sammanfattning : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. LÄS MER
Sammanfattning : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. LÄS MER