Sökning: "front-end"

Visar resultat 31 - 35 av 138 avhandlingar innehållade ordet front-end.

  1. 31. Silicon nanowire based devices for More than Moore Applications

    Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

  3. 32. Rethinking Dynamic Instruction Scheduling and Retirement for Efficient Microarchitectures

    Författare :Mehdi Alipour; David Black-Schaffer; Stefanos Kaxiras; Mikko H. Lipasti; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Out-of-Order Processors; Energy-Efficient; High-Performance; Instruction Scheduling; Computer Science; Datavetenskap;

    Sammanfattning : Out-of-order execution is one of the main micro-architectural techniques used to improve the performance of both single- and multi-threaded processors. The application of such a processor varies from mobile devices to server computers. LÄS MER

  4. 33. Flexible Receivers in CMOS for Wireless Communication

    Författare :Anders Nejdel; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. LÄS MER

  5. 34. Ultra-Wideband Low-Noise Amplifier andSix-Port Transceiver for High Speed DataTransmission

    Författare :Adriana Serban; Shaofang Gong; Ke Wu; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Today’s data rates in wired networks can reach 100 Gbit/s using optical fiber while data rates in wireless networks are much lower - tens of Mbit/s for 3G mobile communication and 480 Mbit/s for ultra-wideband (UWB) short range wireless communications. This difference in data rates can mainly be explained by the limited allowed frequency spectrum, the nature of the radio signal and the high requirements imposed on all hardware designed for high speed and wideband wireless communications. LÄS MER

  7. 35. CMOS Transceiver Front-Ends in Mobile Communication Handsets : Architectures and Building Blocks

    Författare :Ellie Cijvat; Henrik Sjöland; Pietro Andreani; Pieternella Cijvat; Lund University; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; RF CMOS; Wireless Communication; Receiver; Transmitter; Power Amplifier; Harmonic Distortion; Electrical engineering; Elektroteknik; Telecommunication engineering; Telekommunikationsteknik; Electrotechnology; Elektroteknik alt Electrical engineering; RF CMOS; Wireless Communication; Receiver; Transmitter; Power Amplifier; Harmonic Distortion; Electrical engineering; Elektroteknik; Telecommunication engineering; Telekommunikationsteknik;

    Sammanfattning : For mobile communication systems in the low-GHz range, CMOS has increasingly become the technology of choice, and the level of integration in mobile handsets has risen. The use of off-chip components, which increases the handset assembly time and costs, is preferably avoided. LÄS MER