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Visar resultat 21 - 25 av 35 avhandlingar som matchar ovanstående sökkriterier.

1. 21. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

   Författare :Björn Hult; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

   Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER

3. 22. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

   Författare :Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

4. 23. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

   Författare :Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Sammanfattning : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. LÄS MER

5. 24. Quantum Devices from the Assembly of Zero- and One-Dimensional Building Blocks

   Författare :Claes Thelander; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum devices; classical mechanics; quantum mechanics; relativity; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; gravitation; termodynamik; statistisk fysik; Mathematical and general theoretical physics; single-electron transistor; nanowires; AFM; carbon nanotubes; Fysicumarkivet A:2003:Thelander;

   Sammanfattning : This thesis describes novel methods for the fabrication of nanometer-scale electronic devices, such as single-electron transistors and resonant tunneling diodes, from wire- and dot-shaped building blocks. The first part of the thesis describes the manipulation of metal nanoparticles and carbon nanotubes using an atomic force microscope. LÄS MER

7. 25. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

   Författare :Martin Fagerlind; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface states; surface passivation; annealing; processing; AlGaN GaN HEMT; MIS-capacitor;

   Sammanfattning : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. LÄS MER