Sökning: "surface passivation"

Visar resultat 1 - 5 av 43 avhandlingar innehållade orden surface passivation.

  1. 1. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

    Författare :Martin Fagerlind; [2009]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface states; surface passivation; annealing; processing; AlGaN GaN HEMT; MIS-capacitor;

    Sammanfattning : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. LÄS MER

  2. 2. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

    Författare :Martin Fagerlind; [2012]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HFET; passivation characterization; passivation; AlGaN GaN heterostructure;

    Sammanfattning : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. LÄS MER

  3. 3. Termination and passivation of Silicon Carbide Devices

    Detta är en avhandling från Stockholm : KTH

    Författare :Maciej Wolborski; KTH.; [2005]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Silicon Carbide; SiC; passivation; dielectric materials; NATURAL SCIENCES Physics Condensed matter physics Semiconductor physics; NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik;

    Sammanfattning : Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. LÄS MER

  4. 4. Studies of surface treatments of stainless steel for improved corrosion resistance

    Detta är en avhandling från Stockholm : Materialvetenskap

    Författare :Daniel Wallinder; KTH.; [2001]
    Nyckelord :stainless steel; iron; chromium; passivity; passive film; pickling; polishing; passivation; bright-annealing; XPS; SIMS; EIS; potentiostatic polarization; potentiodynamic polarization; aqueous corrosion; localized corrosion; atmospheric corrosion; hi;

    Sammanfattning : .... LÄS MER

  5. 5. Surface modification and passivation of stainless steel

    Detta är en avhandling från Uppsala : Acta Universitatis Upsaliensis

    Författare :Claes-Olof A. Olsson; Uppsala universitet.; [1994]

    Sammanfattning : .... LÄS MER