Sökning: "ohmic contact"

Visar resultat 1 - 5 av 26 avhandlingar innehållade orden ohmic contact.

  1. 1. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

    Författare :Anna Malmros; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

    Sammanfattning : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. LÄS MER

  2. 2. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Detta är en avhandling från Stockholm : KTH

    Författare :Hyung-Seok Lee; KTH.; [2008]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik;

    Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER

  3. 3. High power bipolar junction transistors in silicon carbide

    Detta är en avhandling från Stockholm : KTH

    Författare :Hyung-Seok Lee; KTH.; [2005]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; power device; biplar junction transistor; TiW; ohmic contact; current gain; TECHNOLOGY Electrical engineering; electronics and photonics Electronics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik Elektronik;

    Sammanfattning : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. LÄS MER

  4. 4. An integrated E-E silicon detector by wafer bonding using cobalt disilicide as a buried common ohmic contact

    Detta är en avhandling från Stockholm : KTH

    Författare :Göran Thungström; Mittuniversitetet.; [1997]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; detector; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik;

    Sammanfattning : .... LÄS MER

  5. 5. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Katarina Smedfors; KTH.; [2014]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. LÄS MER