Sökning: "ohmic contact"

Visar resultat 1 - 5 av 35 avhandlingar innehållade orden ohmic contact.

1. 1. Thermally stable electrical contacts to 6H silicon carbide

   Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER

3. 2. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

   Författare :Anna Malmros; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

   Sammanfattning : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. LÄS MER

4. 3. Atom-Probe Field-Ion Microscopy of Electronic Materials

   Författare :Qiu-Hong Hu; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Au GaAs; ohmic contact; superconductors; oxygen ordering; AuGe GaAs; defects; Ag GaAs; Schottky contact; YBa2Cu3O6 delta; APFIM;

   Sammanfattning : This thesis presents work in which atom-probe field-ion microscopy (APFIM) has been applied to two types of electronic materials. In the case of metal/GaAs contacts, the purpose was to characterise the microstructure of the contact interface, particularly the chemical composition variation across the interface. LÄS MER

5. 4. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

   Författare :Chen Ding Yuan; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

   Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER

7. 5. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER