Sökning: "4H-SiC"

Visar resultat 1 - 5 av 69 avhandlingar innehållade ordet 4H-SiC.

  1. 1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Hossein Elahipanah; KTH.; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology; Electrical Engineering; Elektro- och systemteknik; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington;

    Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER

  2. 2. Carrieer transport in 4H-SiC

    Detta är en avhandling från Kista : Mikroelektronik och informationsteknik

    Författare :Antonio Martinez; KTH.; [2001]
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  3. 3. Radiation Hardness of 4H-SiC Devices and Circuits

    Detta är en avhandling från KTH Royal Institute of Technology

    Författare :Sethu Saveda Suvanam; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; radiation hardness; protons; gamma radiation; bipolar junction transistors; aluminium oxide; surface recombination.; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. LÄS MER

  4. 4. Device characteristics of sublimation grown 4H-SiC layers

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :Rafal Ciechonski; Linköpings universitet.; Linköpings universitet.; [2005]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  5. 5. Impact of Ionizing Radiation on 4H-SiC Devices

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Muhammad Usman; KTH.; [2012]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

    Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER