Sökning: "lift-off-free"

Hittade 1 avhandling innehållade ordet lift-off-free.

  1. 1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Hossein Elahipanah; KTH.; KTH.; [2017]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology; Electrical Engineering; Elektro- och systemteknik; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington;

    Sammanfattning : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. LÄS MER