Sökning: "Martin Fagerlind"

Hittade 2 avhandlingar innehållade orden Martin Fagerlind.

  1. 1. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

    Författare :Martin Fagerlind; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HFET; passivation characterization; passivation; AlGaN GaN heterostructure;

    Sammanfattning : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. LÄS MER

  3. 2. Methods for Characterization and Optimization of AlGaN/GaN HEMT Surface Passivation

    Författare :Martin Fagerlind; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; surface states; surface passivation; annealing; processing; AlGaN GaN HEMT; MIS-capacitor;

    Sammanfattning : The Gallium Nitride based high electron mobility transistor is rapidly improving and is emerging as a viable alternative for use in high power applications operating in the microwave frequency domain. The suitability of the AlGaN/GaN material system is due to the possibility to grow epitaxial heterostructures that provide; high electron mobility, high electron saturation velocity, high carrier density and a high dielectric breakdown field. LÄS MER