Sökning: "SEMICONDUCTOR-DEVICES"

Visar resultat 16 - 20 av 51 avhandlingar innehållade ordet SEMICONDUCTOR-DEVICES.

  1. 16. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

  3. 17. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Författare :Stefan Davidsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER

  4. 18. Microwave power device characterization

    Författare :Kristoffer Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

    Sammanfattning : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. LÄS MER

  5. 19. Microscopic Mechanisms of the Formation, Relaxation and Recombination of Excitons in Two-Dimensional Semiconductors

    Författare :Samuel Brem; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; relaxation dynamics; 2D materials; density matrix formalism; excitons; exciton-phonon interaction; Bloch equations;

    Sammanfattning : Monolayers of Transition Metal Dichalcogenides (TMDs) present a giant leap forward towards the realization of semiconductor devices with atomic scale thickness. As a natural consequence of their two-dimensional character TMDs exhibit a reduced dielectric screening, leading to the formation of unusually stable excitons, i.e. LÄS MER

  7. 20. Charge-Spin Conversion and Electronic Transport in Two-Dimensional Materials and van der Waals Heterostructures

    Författare :Anamul Md Hoque; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Spin-orbit coupling; Nanoribbons; Nanotransistor; Graphene; Chemical vapor deposition; Spintronics; Charge-spin conversion; Two-dimensional materials; Proximity effect; van der Waals heterostructure;

    Sammanfattning : Applications related to artificial intelligence (AI), 5G communication, cloud computing, Internet of Things (IoT) will necessitate wide range of data collection, communication and processing. Current charge-based technology using conventional materials suffers adverse effects with down-scaling the device size and has limited efficiency in meeting the future demands for computation and data storage. LÄS MER