Sökning: "Al2< sub>O3< sub>"
Hittade 2 avhandlingar innehållade orden Al2< sub>O3< sub>.
1. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER
2. The microstructure of chemically vapour deposited AL2O3 coatings
Sammanfattning : .... LÄS MER
Resultatsidor:
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