Sökning: "HFET"

Visar resultat 1 - 5 av 18 avhandlingar innehållade ordet HFET.

  1. 1. Experimentally Based HFET Modeling for Microwave and Millimeter Wave Applications

    Författare :Mikael Garcia; Chalmers University of Technology; []
    Nyckelord :MODFET; soft-breakdown; cold FET; large-signal; source balance; SDHT; dispersion; noise figure; temperature noise model; small-signal; TEGFET; direct extraction; Chalmers model; noise parameters; modeling; HEMT; HFET; noise;

    Sammanfattning : Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMICs). Circuit simulations based on accurate transistor models are one of the keys to high circuit yield. Transistor models can also be used to trace problems in the device fabrication processes. LÄS MER

  2. 2. Fabrication and characterization of HFET based MMICs for millimeterwave applications

    Författare :Christer Karlsson; Chalmers University of Technology; []
    Nyckelord :InAs; microwave; millimeterwave; resistive mixer; BCB; balanced doubler; HFET; III-V semiconductor; MMIC;

    Sammanfattning : .... LÄS MER

  3. 3. Large-Signal Modeling of Microwave Transistors

    Författare :Lars Bengtsson; Chalmers University of Technology; []
    Nyckelord :large-signal; HEMT; non-linear models; de-embedding; high-efficiency; class-E amplifier; LDMOS; HBT; HFET; model parameter extraction; microwave transistors;

    Sammanfattning : The development of computer aided design tools for microwave circuit design has increased the interest for accurate transistor models. The circuit complexity has grown as the CAD tools have been improved and the need to predict how non-linear circuits behave has also been increased. LÄS MER

  4. 4. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

    Författare :Martin Fagerlind; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HFET; passivation characterization; passivation; AlGaN GaN heterostructure;

    Sammanfattning : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. LÄS MER

  5. 5. Low phase noise voltage controlled micro- and millimeter wave oscillators

    Författare :Stefan Andersson; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; radio; anti series; microstrip resonator; silicon bipolar transistor; amplitude limiter; cavity resonator; varactor; transposed gain; MESFET; automatic gain control; VCO; delay line; laser; RF; oscillation criteria; millimetre wave; oscillator; mm-wave; noise; multiplier; fibre optic; SAW; DRO; PLL; surface acoustic wave; Si BJT; 1 f noise; FM noise; HEMT; clipping diode; HBT; YIG sphere; device; terfenol; gunn diode; stabilised; YIG film; quarts crystal; phase locked loop; magnetostrictive; resonator; phase error; whispering gallery mode; sapphire resonator; Fabry-Perot resonator; PHEMT; microwave; HFET; phase noise; DR; dielectric resonator; PM noise; balanced oscillator; piezo electric; AGC; frequency discriminator;

    Sammanfattning : .... LÄS MER