Sökning: "molecular beam epitaxy"
Visar resultat 1 - 5 av 47 avhandlingar innehållade orden molecular beam epitaxy.
1. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy
Sammanfattning : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. LÄS MER
2. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER
3. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy
Sammanfattning : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. LÄS MER
4. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy
Sammanfattning : .... LÄS MER
5. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Sammanfattning : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. LÄS MER