Sökning: "Dynamic Avalanche"

Hittade 3 avhandlingar innehållade orden Dynamic Avalanche.

  1. 1. Dynamic avalanche in Si and 4H-SiC power diodes

    Författare :Martin Domeij; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Semiconductor power modules for the control of high currentsand high voltages have important applications in motor drives,traction and power transmission. Dynamic avalanche is of atechnological interest since it may limit the safe operatingarea for bipolar switching devices and for power diodes, whichare important integral parts of a power module. LÄS MER

  3. 2. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

  4. 3. Characterization of electrical properties in 4H-SiC by imaging techniques

    Författare :John Österman; Anders Hallén; Vito Raineri; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : 4H-SiC has physical properties supremely suited for a variety of high power, high frequency and high temperature electronic device applications. To fully take advantage of the material's potential, several problems remain to be solved. LÄS MER