Sökning: "SEMICONDUCTOR-DEVICES"

Visar resultat 6 - 10 av 51 avhandlingar innehållade ordet SEMICONDUCTOR-DEVICES.

  1. 6. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

    Författare :Mattias Thorsell; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; noise modelling; nonlinear measurement; active load-pull; noise measurement; thermal characterisation; AlGaN GaN HEMT; nonlinear modelling;

    Sammanfattning : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. LÄS MER

  3. 7. Investigations of interior electrical properties in power semiconductor devices

    Författare :Mats Rosling; Uppsala universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : .... LÄS MER

  4. 8. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

    Författare :Sadia Muniza Faraz; Qamar ul Wahab; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER

  5. 9. Surfaces and interfaces of low dimensional III-V semiconductor devices

    Författare :Yen-Po Liu; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductor; nanowires; nanosheet; nano-device fabrication; STM; AFM; SGM; OBIC; XPS; Fysicumarkivet A:2022:Liu;

    Sammanfattning : The demand for fast and energy efficient (opto-)electronic applications needs high mobility semiconductor materials, such as InAs with a very high electron mobility and GaSb with a very high hole mobility. Beyond the material itself, also an innovative device geometry is needed, for example, the gate-all-around geometry that provides higher efficiency and electrostatic control for computational units. LÄS MER

  7. 10. Design and Fabrication of III-V Semiconductor Devices for Millimetre- and Submillimetre Wave Applications

    Författare :Svein M. Nilsen; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Devices (various types of diodes) have been fabricated in several different III-V semiconductors (AlxGa1-xAs, In1-xGaxAs, and InAs). The III- V compound semiconductors lend themselves well to high frequency applications due to the high electron mobility that can be obtained. LÄS MER