Sökning: "Silicon Carbide"

Visar resultat 1 - 5 av 154 avhandlingar innehållade orden Silicon Carbide.

  1. 1. Point Defects in Silicon and Silicon-Carbide

    Författare :Paolo Pellegrino; KTH; []
    Nyckelord :silicon; silicon carbide; defects; dlts;

    Sammanfattning : .... LÄS MER

  2. 2. Silicon Carbide Microwave Devices

    Författare :Joakim Eriksson; Chalmers University of Technology; []
    Nyckelord :SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Sammanfattning : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. LÄS MER

  3. 3. Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide

    Författare :Denny Åberg; KTH; []
    Nyckelord :capacitance spectrocopy; deep levels; deep level transient spectroscopy; thermal donors; thermal double donors; ultra shallow thermal donors; chemical kinetics; silicon carbide; ion implantation; implantation induced defects; implantation induced pas;

    Sammanfattning : .... LÄS MER

  4. 4. Termination and passivation of Silicon Carbide Devices

    Författare :Maciej Wolborski; Anders Hallén; Jan Szmidt; KTH; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; Silicon Carbide; SiC; passivation; dielectric materials; Semiconductor physics; Halvledarfysik;

    Sammanfattning : Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. LÄS MER

  5. 5. Junction barrier schottky rectifiers in silicon carbide

    Författare :Fanny Dahlquist; KTH; []
    Nyckelord :Silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifieer; Power rectifier; Unipolar devices; Punch-through design;

    Sammanfattning : .... LÄS MER