Sökning: "Wide bandgap device"

Visar resultat 1 - 5 av 49 avhandlingar innehållade orden Wide bandgap device.

1. 1. Microwave power device characterization

   Författare :Kristoffer Andersson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

   Sammanfattning : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. LÄS MER

3. 2. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

   Författare :Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

   Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

4. 3. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

   Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

5. 4. Thermal conductivity of wide and ultra-wide bandgap semiconductors

   Författare :Dat Tran; Plamen Paskov; Vanya Darakchieva; Martin Kuball; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-nitrides; β-Ga2O3; Thermal conductivity; Thermal transport;

   Sammanfattning : This PhD thesis presents experimental and theoretical studies of the thermal conductivity of wide and ultra-wide bandgap semiconductors including GaN, AlN, β-Ga2O3 binary compounds, and AlxGa1−xN, ScxAl1−xN, YxAl1−xN ternary alloys. Thermal conductivity measurements are conducted using the transient thermoreflectance (TTR) technique and the results are interpreted using analytical models based on the solution of the Boltzmann transport equation (BTE) within the relaxation time approximation (RTA). LÄS MER

7. 5. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

   Författare :Sadia Muniza Faraz; Qamar ul Wahab; Linköpings universitet; []
   Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

   Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER