Visar resultat 1 - 5 av 56 avhandlingar innehållade ordet sapphire.
Sammanfattning : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. LÄS MER
Sammanfattning : This thesis concerns the preparation of Josephson junctions and their applications in Superconducting Quantum Interference Devices (SQUIDs). High temperature superconductors were used for operation at 77 K, the boiling temperature of liquid nitrogen. LÄS MER
Sammanfattning : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. LÄS MER
Sammanfattning : The appealing properties of ceramics include retention of strength and hardness at high temperatures, chemical inertness and low density. However, monolithic ceramics fail in a brittle, unpredictable manner making them unsuitable for many applications where reliability is a key requirement. LÄS MER
Sammanfattning : .... LÄS MER